TEMIR BILAN LEGIRLANGAN KREMNIY MONOKRISTALLARIDA DEFEKT HOSIL BO'LISHI
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Choxralskiy usulida olingan issiqlik bilan ishlangan kremniyning elektr xossalariga temir bilan diffuzion legirlashning ta'siri o'rganilgan. Temirning mavjudligi "o'sish" kelib chiqishiga ega termodonorlar uchun kurtaklanish markazlari konsentratsiyasini kamaytirishi ko'rsatilgan. Bu holat ularning boshlang'ich tezligi pasayishiga sabab bo'ldi; boshqa tomondan, temir aralashmasi termodonorlarning parchalanish ehtimolini kamaytirib, ularning elektr jihatdan passiv holatga o'tishiga olib keldi, bu esa uzoq muddat qizdirishda termodonorlar konsentratsiyasining ortishiga sabab bo'ldi. 600°C dan yuqori haroratlarda issiqlik bilan ishlov berish temir aralashmasining elektr faolligini yo'qotishiga olib keldi. Si (Fe) kristallarini 1100÷1200 °C dan 10 soat davomida chiniqtirish temir atomlarini elektr jihatdan faol o'rin almashish holatiga qaytardi.
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Adabiyotlar
Reyvey, K. Defects and impurities in semiconductor silicon / K. Reyvy. - M.: Mir. –1984. -P 472.
Milvidsky, M.G. Semiconductor materials in modern electronics / M.G. Milvidsky. - M.: Nauka –1986. – P.144.
Ilyin, M.A. Determination of oxygen and carbon content in silicon / M.A. Ilyin, V.Ya. Kovarsky, A.F. Orlov // Factory laboratory. - 1984. - T. 50, No. 1. - P. 24 - 32.
Kuchis, E.V. Galvanomagnetic effects and methods of their study / E.V. Kuchis. - M.: Radio and communication. – 1990. – P. 264.
Brinkevich D.I. Influence of oxygen on the behavior of gold impurity in silicon / Inorganic materials. - 1993. - V. 29, No. 12. - SP. 1587 – 1589.
Kaiser, W. Frisch, H.L. Reiss H. Mechanism of the formation of donor states in heat-treated silicon // Phys. Rev. - 1958. - V. 112, No. 8. - P. 1546 - 1554.
Vabishchevich N.V., Brinkevich D.I., Prosolovich V.S. Oxygen precipitates and the formation of thermal donors in silicon // Physics and Technology of Semiconductors. - 1998. - T. 32, No. 6. -P. 712.
Tan, T.Y. Oxygen precipitation and the generation of dislocations in silicon / T.Y. Tan, W.K. Tice // Phyl. Mag. - 1976. - V. 34, No. 4. - P. 615 - 631.
Enhanced oxygen diffusion in silicon at low temperatures / A.K. Tipping [et al.] // Mater. sci. forum. - 1986. - V. 10 - 12, No. 3. - P. 887 – 892.
Daliyev, H.S., Husanov Z.M., Abduganiyev Y.A. A program for calculating the distribution of iron atoms entering silicon during diffusion. // CERTIFICATE of official registration of the program created for electronic calculators. Ministry of Justice of the Republic of Uzbekistan. No. DGU 18121.
Daliev Kh.S., Daliev Sh.Kh., Paluanova A.D. Radiation and thermal defect formation in silicon MIS structures with impurities of refractory elements. // Scientific journal "Physics of semiconductors and microelectronics". - Tashkent, 2019, volume 1, issue 5. P. 72–77
Daliev Kh.S., Utamuradova Sh.B. Study of the temperature dependence of the diffusion of vanadium in silicon // "Science and the World" International scientific journal, No. 4 (116), – 2023. P. 12-15.