THE DUAL ROLE OF OXYGEN IN POLYCRYSTALLINE LEAD CHALCOGENIDE FILMS.
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The paper considers the features of the interaction of polycrystalline lead chalcogenide films with oxygen. It is shown that at temperatures up to 600 K oxygen is adsorbed on the surface of the films, forming acceptor-type surface electronic states that lead to inversion of the conductivity type. In polycrystalline structures the diffusion of oxygen along the crystallite boundaries promotes the formation of intercrystallite potential barriers limiting charge transport. Changes in the physical properties under the influence of oxygen are considered, including the formation of oxide phases and acceptor levels, as well as the effect of heat treatment. Experimental data on the band gap width, the carrier lifetime and the recombination mechanism are presented. It has been established that oxygen exerts both a positive and a negative influence on the characteristics of the films, which is important for the application of lead chalcogenides in sensors and thermoelectric devices.
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