INVESTIGATION OF LONG-WAVELENGTH INFRARED RADIATION DETECTION MECHANISMS IN A GAS-DISCHARGE SEMICONDUCTOR PHOTOGRAPHIC IONIZATION CAMERA

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Published: Jun 5, 2026
Keywords:
gas-discharge cell, damping cell, gallium arsenide, silicon doped with sulfur semiconductor photographic ionization chamber, infrared radiation, photoelectric hysteresis photographic effect.

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Sh.B. Utamuradova
Institute of Semiconductor Physics and Microelectronics
B.Z. Xaydarov
Institute of Semiconductor Physics and Microelectronics

Abstract

Physical processes in gas-discharge cells with semiconductor electrodes were investigated theoretically and experimentally. Plasma contacts were found to enhance the stability of gas-discharge luminescence. A semiconductor photographic ionization camera with an additional damping cascade enabled object detection in the infrared range of 0.38–11 μm and beyond. The experimental results were in good agreement with theoretical calculations.

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How to Cite
Utamuradova, S., & Xaydarov, B. (2026). INVESTIGATION OF LONG-WAVELENGTH INFRARED RADIATION DETECTION MECHANISMS IN A GAS-DISCHARGE SEMICONDUCTOR PHOTOGRAPHIC IONIZATION CAMERA. Research Focus International Scientific Journal, 5(5), 10–16. Retrieved from https://refocus.uz/index.php/rf/article/view/2240
Issue
Vol. 5 No. 5 (2026): Research Focus International Scientific Journal. Volume 5, Issue 5 (2026)
Section
01.00.00 – Physical and Mathematical Sciences

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