DOPING A SILICON SINGLE CRYSTAL WITH TERBIUM THROUGH DIFFUSION.

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Published: Apr 5, 2024
Keywords:
monocrystalline silicon, rare-earth elements, Terbium, diffusion method, alloying, Hall effect, Van der Pau method, type of conductivity, concentration of charge carriers, resistivity

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Saidimov Ya.A.
Research Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan (Tashkent), Uzbekistan
Rumi R.F.
Research Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan (Tashkent), Uzbekistan
Umarov F.B.
Research Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan (Tashkent), Uzbekistan

Abstract

Using the diffusion method, monocrystalline samples of silicon doped with Thulium were prepared at 1250 degrees Celsius for 50 hours. The samples were found to have p-type conductivity after high-temperature annealing. After this process, the samples changed their type of conductivity from p-type to n-type.

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How to Cite
Saidimov Ya.A., Rumi R.F., & Umarov F.B. (2024). DOPING A SILICON SINGLE CRYSTAL WITH TERBIUM THROUGH DIFFUSION. Research Focus International Scientific Journal, 3(3), 8–10. Retrieved from https://refocus.uz/index.php/1/article/view/919
Issue
Vol. 3 No. 3 (2024): Research Focus International Scientific Journal 3 (3)
Section
01.00.00 – Physics and mathematics sciences
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